PART |
Description |
Maker |
GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
SPM3501 |
GaAs MMICs
|
SANYO
|
BGA430 |
Silicon MMICs - 30dB LNB Amplifier, 0.9...2.2GHz, SOT363
|
Infineon
|
SFH415 SFH415_6 SFH416-R Q62702-P1136 Q62702-P1137 |
GaAs-IR-Lumineszenzdioden GaAsInfrared Emitters From old datasheet system GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TG2216TU |
RF SPDT Switch TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor Toshiba Corporation
|
LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
CMY91 Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) 砷化镓微波单片集成电路(砷化镓混频器,集成中频放大器的移动通信 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|